Influence of phonon scattering on the performance of p-i-n band-to-band tunneling transistors

Influence of Phonon Scattering on the Performance of p-i-n Band-to-Band-Tunneling Transistors

Band-to-Band Tunneling Transistors: Scalability and Circuit Performance

A dissertation submitted in partial satisfaction of the requirements for the degree of Doctor of Philosophy in Engineering – Electrical Engineering and Computer Sciences and the Designated Emphases in Nanoscale Science and Engineering and Energy Science and Technology in the Graduate Division of the University of California, Berkeley Committee in charge: Professor Tsu-Jae King Liu, Chair Profes...

Simulation of Phonon-Assisted Band-to Band Tunneling in Carbon Nanotube Field-Effect Transistors

Band-to-band tunneling in carbon nanotube field-effect transistors.

A detailed study on the mechanism of band-to-band tunneling in carbon nanotube field-effect transistors (CNFETs) is presented. Through a dual-gated CNFET structure tunneling currents from the valence into the conduction band and vice versa can be enabled or disabled by changing the gate potential. Different from a conventional device where the Fermi distribution ultimately limits the gate volta...

Band structure, phonon scattering, and the performance limit of single-walled carbon nanotube transistors.

Semiconducting single-walled carbon nanotubes are studied in the diffusive transport regime. The peak mobility is found to scale with the square of the nanotube diameter and inversely with temperature. The maximum conductance, corrected for the contacts, is linear in the diameter and inverse temperature. These results are in good agreement with theoretical predictions for acoustic phonon scatte...